Statistics
Publications
10
Citations
146
H-Index
10
Active since
2001
Ryouji Kosugi is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, materials science, and semiconductor devices.
Publications per year
2001–2013
10
10
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo et al. · Materials science forum · 2003 · 17 citations · Full text
Engineering, Electrical Engineering, Electronic Materials +12
(Invited) SiC MOS Interface States: Difference between Si Face and C Face
T. Umeda, Mitsuo Okamoto, Ryouji Kosugi et al. · ECS Transactions · 2013 · 15 citations
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