Tsutomu Yatsuo

First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method

Ryoji Kosugi, Yuuki Sakuma, Kazutoshi Kojima et al. · 2014 · 79 citations

Engineering, First Experimental Demonstration, Multi-epitaxial Growth Method +18

Effect of the oxidation process on the electrical characteristics of 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors

Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo et al. · Applied Physics Letters · 2006 · 57 citations

Electrical Characteristics, Semiconductor Technology, Electrical Engineering +12

700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)

Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka et al. · IEEE Electron Device Letters · 2006 · 41 citations

Semiconductor Technology, Electrical Engineering, Buried Gate Sic-sit +10

Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

Ryoji Kosugi, Yuuki Sakuma, Kazutoshi Kojima et al. · Materials science forum · 2013 · 31 citations

Materials Engineering, Super Junction, Electrical Engineering +10

Design considerations for large-current GTOs

Tsutomu Yatsuo, S. Kimura, Yukiyasu Sato · IEEE Transactions on Electron Devices · 1989 · 28 citations

Low-power Electronics, Hardware Security, Electrical Engineering +11