Applied Physics Letters · 1984 · 34 citations · 6 references
Natural SciencesMaterials SciencePhysicsElectrochemistrySemiconductor MaterialsSpectroscopyCarrier TransportCharge Carrier TransportElectrical CharacterizationElectrical ConductivitySemiconductor InterfacesSemiconductor PhysicsCarrier Transport In SemiconductorsCharge Carrier DynamicsCharge Transport MeasurementsConcentrationQuantum CapacitanceSiliconSilicon Electrical PropertiesSilicon Physics
We have investigated by capacitance transient spectroscopy concentration profiles of gold produced by electrotransport and concentration variations by pairing of gold with iron in p-type silicon. We have found that the line amplitude of the gold donor and that of the gold acceptor have a constant radio independent of gold concentration, diffusion temperature, and of gold-iron-pair concentration. From this result we conclude that the two levels are associated with one gold species in silicon.
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Properties of Gold-Doped Silicon
C. B. Collins, R. O. Carlson, C. J. Gallagher · Physical Review · 1957 · 261 citations
Complex nature of gold-related deep levels in silicon
D. V. Lang, H. G. Grimmeiss, Evert Jan Meijer et al. · Physical review. B, Condensed matter · 1980 · 235 citations