ALD of Rhodium Thin Films from Rh(acac)[sub 3] and Oxygen

Abstract

Rhodium thin films were grown by atomic layer deposition (ALD) from and oxygen. The film growth rate at was independent of the oxygen pulse time but showed some dependence on the pulse time. The films were metallic rhodium with a preferred (111) orientation, and had low resistivities and low impurity contents. The film thickness depended linearly on the number of the deposition cycles.