Concepedia

Wafer direct bonding with ambient pressure plasma activation

Markus Gabriel, Brad Johnson, Manfred Reiche, Marko Eichler

Microsystem Technologies · 2006 · 16 citations · 10 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceMicrofabricationPlasma PhysicsSemiconductor DevicesPlasma FundamentalsPlasma Surface TreatmentPlasma-surface InteractionsPlasma-wall InteractionsWafer BondingDirect Wafer BondingPlasma ActivationPlasma-activated BondingPlasma-assisted BondingWafer-to-wafer Bonding

References

10

Modeling and applications of silent discharge plasmas

Bengt Eliasson, U. Kogelschatz · IEEE Transactions on Plasma Science · 1991 · 817 citations

Natural Sciences, Electrical Engineering, Physics +17

Chemical Free Room Temperature Wafer To Wafer Direct Bonding

Shari Farrens, James Dekker, Jason Kenneth Smith et al. · Journal of The Electrochemical Society · 1995 · 146 citations

Engineering, Materials Engineering, Materials Science +14

Void-free silicon-wafer-bond strengthening in the 200–400 °C range

G. Kissinger, W. Kissinger · Sensors and Actuators A Physical · 1993 · 69 citations

Engineering, Materials Engineering, Materials Science +11

Time-Dependent Surface Properties and Wafer Bonding of O[sub 2]-Plasma-Treated Silicon (100) Surfaces

Marco Wiegand, Manfred Reiche, U. Gösele · Journal of The Electrochemical Society · 2000 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-temperature wafer-level transfer bonding

Frank Niklaus, Peter Enoksson, Patrick Griss et al. · Journal of Microelectromechanical Systems · 2001 · 64 citations

Engineering, Electrical Engineering, Materials Science +17