G. Kissinger

Statistics

Publications

Citations

566

H-Index

Active since

1991

Affiliations

Leibniz Institute for High Performance Microelectronics(Current)

Brandenburg University of Technology Cottbus-Senftenberg

Institut für Solartechnologien (Germany)

IMEC

Medias Klinikum

G. Kissinger is an author at Leibniz Institute for High Performance Microelectronics specializing in applied physics, engineering, and materials science.

ORCID

Top concepts

EngineeringApplied PhysicsMaterial ScienceCrystalline DefectsMicroelectronicsMaterials EngineeringChemistryPhysicsDefect ToleranceSurface Science

Publications per year

1991–2017

Publications

Void-free silicon-wafer-bond strengthening in the 200–400 °C range

G. Kissinger, W. Kissinger · Sensors and Actuators A Physical · 1993 · 69 citations

Materials Science, Void-free Silicon-wafer-bond Strengthening, Wafer Scale Processing +2

Hydrophilicity of Silicon Wafers for Direct Bonding

G. Kissinger, W. Kissinger · physica status solidi (a) · 1991 · 60 citations

Materials Science, Materials Engineering, Chemical Engineering +15

Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers

G. Kissinger, J. Da̧browski, A. Sattler et al. · Journal of The Electrochemical Society · 2007 · 47 citations

Engineering, Crystal Growth Technology, Oxide Precipitation +18

Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon

G. Kissinger, Dawid Kot, M. Klingsporn et al. · ECS Journal of Solid State Science and Technology · 2015 · 25 citations · Full text

Materials Science, Materials Engineering, Copper Oxide Materials +13

Interaction of oxygen with thermally induced vacancies in Czochralski silicon

Vladimir Akhmetov, G. Kissinger, Wilfried von Ammon · Applied Physics Letters · 2009 · 23 citations

Materials Science, Inorganic Chemistry, Fourier Transform +15

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