W. Kissinger

Void-free silicon-wafer-bond strengthening in the 200–400 °C range

G. Kissinger, W. Kissinger · Sensors and Actuators A Physical · 1993 · 69 citations

Materials Science, Void-free Silicon-wafer-bond Strengthening, Wafer Scale Processing +2

Hydrophilicity of Silicon Wafers for Direct Bonding

G. Kissinger, W. Kissinger · physica status solidi (a) · 1991 · 60 citations

Materials Science, Materials Engineering, Chemical Engineering +15

Hole Effective Masses in CuInSe₂

H. Neumann, W. Kissinger, H. Sobotta et al. · physica status solidi (b) · 1981 · 50 citations

Thz Photonics, Optical Materials, Engineering +19

Optical transitions in strained Si1−<i>y</i>C<i>y</i> layers on Si(001)

W. Kissinger, M. Weidner, H. J. Osten et al. · Applied Physics Letters · 1994 · 41 citations

Ii-vi Semiconductor, Carbon Content, Engineering +15

Critical points of Si1−yCy and Si1−x−yGexCy layers strained pseudomorphically on Si(001)

W. Kissinger, H. J. Osten, M. Weidner et al. · Journal of Applied Physics · 1996 · 26 citations

Optical Materials, Si1−x−ygexcy Layers, Engineering +20