Probe current distribution characterization technique for focused ion beam

Abstract

Focused ion beam technology continues to scale into the nano regime to keep pace with the scaling of semiconductor processes and biological science research. As the requirements for higher image resolution and machining precision increase, the necessity for comprehensive analysis and fine tuning of the ion beam profile is becoming increasingly important and more challenging. Older techniques such as edge resolution analysis or ion beam spot burns provide only a limited understanding of the ion beam probe current distribution. In this paper, the authors discuss a quantitative ion beam probe current distribution measurement technique. The principle of the approach will be discussed; modeling and empirical results of a gallium beam profile are presented in this paper.