Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer

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Zhe Liu, C. Lee, Vijay Narayanan et al. · IEEE Transactions on Electron Devices · 2002 · 482 citations

Engineering, Electrical Engineering, Materials Science +17

Single charge and confinement effects in nano-crystal memories

Sandip Tiwari, Farhan Rana, K. Chan et al. · Applied Physics Letters · 1996 · 343 citations

Engineering, Electrical Engineering, Physics +17

Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

Zerlinda Tan, Subhranu Samanta, Won Jong Yoo et al. · Applied Physics Letters · 2004 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +17

Small silicon memories: confinement, single-electron,. and interface state considerations

S. Tiwari, Jeremy Wahl, Helena Silva et al. · Applied Physics A · 2000 · 60 citations

Engineering, Electrical Engineering, Materials Science +14

Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques†

C. Busseret, A. Souifi, T. Baron et al. · Superlattices and Microstructures · 2000 · 45 citations

Engineering, Materials Engineering, Materials Science +12