Jeremy Wahl

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Novel Integration Scheme, Engineering, Vlsi Design +21

Small silicon memories: confinement, single-electron,. and interface state considerations

S. Tiwari, Jeremy Wahl, Helena Silva et al. · Applied Physics A · 2000 · 59 citations

Engineering, Electronic Memory, Applied Physics +4

Write, erase and storage times in nanocrystal memories and the role of interface states

Jeremy Wahl, Helena Silva, Ali Gokirmak et al. · 2003 · 16 citations

Engineering, Memory Design, Percolation Transport +18

mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

Qiang Yu, Said Rami, James Waldemer et al. · 2020 · 16 citations

Recent Mmwave, Thz Photonics, Electrical Engineering +15

Lack of charge offset drift is a robust property of Si single electron transistors

E. Hourdakis, Jeremy Wahl, Neil M. Zimmerman · Applied Physics Letters · 2008 · 14 citations

Semiconductor Technology, Electrical Engineering, Fundamental Charge +13