Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology

H.-J. Lee, Said Rami, Surej Ravikumar, +4

EngineeringRadio FrequencyOscillatorsFinfet TechnologyMicrowave Transmission +14

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then, M. Radosavljević, Pratik Koirala, +22

2021 IEEE International Electron Devices Meeting (IEDM)

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorAdvanced Scaling +13

Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Hyung-Jin Lee, Steven Callender, Said Rami, +3

Low-power ElectronicsIntel 22NmElectrical EngineeringEngineeringVlsi Design +13

Enabling Hybrid Bonding on Intel Process

Adel Elsherbini, Kimin Jun, Richard Vreeland, +15

2021 IEEE International Electron Devices Meeting (IEDM)

EngineeringDie Assembly ChangesComputer ArchitectureHardware ArchitectureAdvanced Packaging (Semiconductors) +14

A 120-Gb/s 100–145-GHz 16-QAM Dual-Band Dielectric Waveguide Interconnect With Package Integrated Diplexers in Intel 16

Georgios C. Dogiamis, Thomas W. Brown, Neelam Prabhu Gaunkar, +7

IEEE Solid-State Circuits Letters

Electrical EngineeringMillimeter Wave TechnologyEngineeringRadio FrequencyHigh-frequency Device +10

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

Han Wui Then, M. Radosavljević, Qiang Yu, +19

IEEE Microwave and Wireless Technology Letters

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +13

A 50-Gb/s 134-GHz 16-QAM 3-m Dielectric Waveguide Transceiver System Implemented in 22-nm FinFET CMOS

Thomas W. Brown, Georgios C. Dogiamis, Yi-Shin Yeh, +20

IEEE Solid-State Circuits Letters

Matrix EqualizationEngineeringRadio FrequencyHigh-frequency DeviceAntenna +7

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Han Wui Then, M. Radosavljević, Pratik Koirala, +25

2022 International Electron Devices Meeting (IEDM)

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +13

5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology

Qiang Yu, Han Wui Then, Derek S. Thomson, +18

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

Qiang Yu, Said Rami, James Waldemer, +26

Recent MmwaveThz PhotonicsElectrical EngineeringSub-thz Technology DevelopmentEngineering +13