Publication | Closed Access
Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology
94
Citations
6
References
2018
Year
Unknown Venue
EngineeringRadio FrequencyOscillatorsFinfet TechnologyMicrowave TransmissionIntegrated CircuitsIntel 22NmRf SemiconductorElectronic EngineeringElectronic CircuitElectrical EngineeringHigh-frequency DevicePlanar TechnologiesComputer EngineeringFlicker Noise ImprovementMicroelectronicsMicrowave EngineeringCircuit Design OptimizationIntel 22Ffl
Intel 22FFL is a unique FinFET process technology optimized for RF and mmWave applications supporting superior RF performance to planar technologies with both f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of NMOS above 300 GHz and 450 GHz respectively. Flicker noise improvement over planar technologies and excellent gain-power efficiency enabling low-power wireless applications are demonstrated.
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