2018 · 94 citations · 6 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignNoise In Electronic DevicesNoise In Semiconductor DevicesRadio-frequency Integrated CircuitsCircuit OptimizationFlicker NoiseHigh-frequency ElectronicsHigh-frequency PerformanceLow-power Wireless CommunicationMillimeter-wave Integrated CircuitsPower EfficiencyProcess Technology Selection
Intel 22FFL is a unique FinFET process technology optimized for RF and mmWave applications supporting superior RF performance to planar technologies with both f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of NMOS above 300 GHz and 450 GHz respectively. Flicker noise improvement over planar technologies and excellent gain-power efficiency enabling low-power wireless applications are demonstrated.
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A 22nm FDSOI Technology Optimized for RF/mmWave Applications
Shao-er Ong, Steffen Lehmann, W.H. Chow et al. · 2018 · 144 citations