Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique

Abstract

We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10-MeV electron irradiation using the conductance technique. The fast-state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.