Applied Physics Letters · 1989 · 41 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsMos CapacitorsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor PhysicsConductanceDevice Noise CharacterizationMetal-oxide-semiconductor Field-effect Transistor Small-signal ModelsMetal-semiconductor Field-effect TransistorsNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsNoise Sources In Semiconductor MaterialsSemiconductor Noise
We report the observation of a low-frequency plateau in conductance measurements on silicon metal-oxide-semiconductor capacitors. The signal is consistent with the ‘‘slow’’ states observed by other techniques, in particular those states responsible for 1/f noise in silicon metal-oxide-semiconductor field-effect transistors.
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