Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates

Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond

Glen A. Slack · Journal of Applied Physics · 1964 · 658 citations

Engineering, Impure Si, Silicon Carbide +21

Mosaic structure in epitaxial thin films having large lattice mismatch

V. Srikant, James S. Speck, David R. Clarke · Journal of Applied Physics · 1997 · 445 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +14

Dislocation mediated surface morphology of GaN

B. Heying, E. J. Tarsa, C. R. Elsass et al. · Journal of Applied Physics · 1999 · 400 citations

Materials Engineering, Materials Science, Epitaxial Growth +13

X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt et al. · Applied Physics Letters · 2000 · 323 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

Inversion Domain and Stacking Mismatch Boundaries in GaN

John E. Northrup, Jörg Neugebauer, Lucia Romano · Physical Review Letters · 1996 · 257 citations

Wide-bandgap Semiconductor, Inversion Domain, Domain Wall Energies +14