Recent advances in GaN power electronics

Abstract

Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.