Japanese Journal of Applied Physics · 1991 · 14 citations · 3 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsThin-film TransistorsConductanceField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingPolysiliconThin-film Transistor ModelingThreshold VoltageThreshold Voltage ExtractionThreshold Voltage Modeling
This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model.
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