Material properties and characteristics of polysilicon transistors for large area electronics

Physics of amorphous silicon based alloy field-effect transistors

M. S. Shur, M. Hack · Journal of Applied Physics · 1984 · 416 citations

Engineering, Electrical Engineering, Materials Science +17

Grain boundaries in semiconductors

H. J. Leamy, G. E. Pike, C. H. Seager · 1982 · 267 citations

Natural Sciences, Materials Science, Physics +17

Determination of gap state density in polycrystalline silicon by field-effect conductance

G. Fortunato, P. Migliorato · Applied Physics Letters · 1986 · 182 citations

Engineering, Materials Science, Physics +17

Identification of the Dangling-Bond State within the Mobility Gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si: H by Depletion-Width-Modulated ESR Spectroscopy

J. David Cohen, J. P. Harbison, K. W. Wecht · Physical Review Letters · 1982 · 127 citations

Natural Sciences, Materials Science, Physics +17

Effects of grain boundaries on the channel conductance of SOl MOSFET's

J.G. Fossum, A. Ortíz-Conde · IEEE Transactions on Electron Devices · 1983 · 122 citations

Engineering, Electrical Engineering, Materials Science +17