MOVPE GaN growth: determination of activation energy using in-situ reflectometry

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2001 · 231 citations

Engineering, Materials Engineering, Materials Science +9

THE PYROLYSIS OF TRIMETHYL GALLIUM

M. G. Jacko, S. J. W. Price · Canadian Journal of Chemistry · 1963 · 225 citations

Natural Sciences, Chemical Engineering, Chemistry +14

High temperature adduct formation of trimethylgallium and ammonia

A. Thon, T. F. Kuech · Applied Physics Letters · 1996 · 154 citations

Natural Sciences, Chemistry, Materials Science +14

Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium Nitride

S. S. Liu, D. A. Stevenson · Journal of The Electrochemical Society · 1978 · 120 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17