Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer - Concepedia

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Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer

18

Citations

6

References

1995

Year

Kanji Iizuka, Kazuo Matsumaru, Toshimasa Suzuki, Haruo Hirose, K. Suzuki, Hiroshi Okamoto

Journal of Crystal Growth

Electrical EngineeringGaas/algaas Multiple QuantumEngineeringBuffer LayerApplied PhysicsDirect GrowthMolecular Beam EpitaxyCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor

References

	Year	Citations

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