Improvement of Properties of p-GaN by Mg Delta Doping

Abstract

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.