Si diffusion in epitaxial GaN

Abstract

Abstract The aim of this work is to determine diffusion coefficient of silicon in gallium nitride under different annealing conditions. Silicon was implanted into 3 µm thick GaN layer deposited on sapphire substrate with MOVPE (Metalorganic Vapour Phase Epitaxy) method. Implantation was performed at room temperature to a dose of 6×10 15 /cm 2 at energy of 100 keV. The samples were annealed under 1 atm nitrogen pressure at 900–1200 °C with or without an AlN protective layer. The extent of diffusion of the implanted species was characterized using the SIMS (Secondary Ion Mass Spectrometry) technique. The resultant concentration profiles are characterized with two diffusion fronts: slow diffused Si atoms at high concentration and fast diffused Si atoms at low concentration. We ascribe the first mechanism as to originate from diffusion in the crystal bulk (substitutional migration), while the second one – from diffusion via grain boundaries/dislocations. Si diffusion coefficient in a crystal was found to be dependent on annealing conditions, in contrast to diffusion via grain boundary. Calculated diffusion coefficient parameters for annealing with and without AlN layer amount respectively to: D O = 6.5×10 –11 cm 2 /s, E a = 0.89 eV and D O = 9.1×10 –8 cm 2 /s, E a = 1.55 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)