IEEE Transactions on Electron Devices · 1988 · 87 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesNoise MeasurementGainHigh-electron-mobility TransistorsLow-noise Microwave TransistorsMicrowave TransistorsNoise FigureNoise Figure MeasurementNoise In Field-effect TransistorsTransistor Noise
Quarter-micrometer gate-length high-electron-mobility transistors (HEMTs) for cryogenic low-noise application with very low light sensitivity have been developed. At room temperature, these exhibit a noise figure of 0.4 dB with associated gain of 15 dB at 8 GHz. At a temperature of 12.5 K the minimum noise temperature of 5.3+or-1.5 K has been measured at 8.5 GHz, which is the best noise performance observed to date for any microwave transistors. The results clearly demonstrate the potential for low-temperature low-noise applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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