A.A. Jabra

W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

P.C. Chao, M. S. Shur, R. C. Tiberio et al. · IEEE Transactions on Electron Devices · 1989 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-low-noise cryogenic high-electron-mobility transistors

K.H.G. Duh, M.W. Pospieszalski, W. Kopp et al. · IEEE Transactions on Electron Devices · 1988 · 87 citations

Engineering, Electrical Engineering, Microelectronics +16

Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs

Ming-Yih Kao, P.M. Smith, P. Ho et al. · IEEE Electron Device Letters · 1989 · 64 citations

Engineering, Electrical Engineering, Microelectronics +16

High-performance InP-based HEMT millimeter-wave low-noise amplifiers

K.H.G. Duh, P.C. Chao, P. Ho et al. · IEEE MTT-S International Microwave Symposium digest · 2003 · 42 citations

Engineering, Electrical Engineering, Materials Science +17