Plasma etch-induced conduction changes in gallium nitride

Role of hydrogen in doping of GaN

Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1996 · 332 citations

Wide-bandgap Semiconductor, Engineering, Physics +11

Ion implantation doping and isolation of GaN

S. J. Pearton, C. B. Vartuli, J.C. Zolper et al. · Applied Physics Letters · 1995 · 298 citations

Semiconductors, Materials Science, Electrical Engineering +13

Interactions of hydrogen with native defects in GaN

Chris G. Van de Walle · Physical review. B, Condensed matter · 1997 · 257 citations

Wide-bandgap Semiconductor, Native Defects, Engineering +15

Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

C. Youtsey, Lucia Romano, I. Adesida · Applied Physics Letters · 1998 · 228 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

R. J. Shul, S.P. Kilcoyne, Mary H. Crawford et al. · Applied Physics Letters · 1995 · 112 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13