Publication | Closed Access

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Wide-bandgap SemiconductorElectrical EngineeringGan/ingan Light-emitting DiodesEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DevicePorous Gan TemplatesOptoelectronicsCompound SemiconductorGan Films