A. Diez

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and <i>in situ</i> SixNy masking

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Applied Physics Letters · 2002 · 183 citations

Engineering, Optoelectronic Devices, Semiconductors +16

Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

A. Dadgar, F. Schulze, M. Wienecke et al. · New Journal of Physics · 2007 · 138 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +14

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 138 citations

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar et al. · Applied Physics Letters · 2002 · 128 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +15