Growth of In Ga1− As on GaAs (001) by molecular beam epitaxy

Determination of critical layer thickness in In<i>x</i>Ga1−<i>x</i>As/GaAs heterostructures by x-ray diffraction

P. J. Orders, B. F. Usher · Applied Physics Letters · 1987 · 198 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy

J.H. Neave, B.A. Joyce · Journal of Crystal Growth · 1978 · 186 citations

Engineering, Materials Engineering, Materials Science +14

Surface and interface depletion corrections to free carrier-density determinations by hall measurements

Amitabh Chandra, C. E. C. Wood, D. W. Woodard et al. · Solid-State Electronics · 1979 · 173 citations

Engineering, Electrical Engineering, Materials Science +16

Growth and characterization of Si1−<i>x</i>Ge<i>x</i> and Ge epilayers on (100) Si

J.‐M. Baribeau, T. E. Jackman, D. C. Houghton et al. · Journal of Applied Physics · 1988 · 118 citations

Engineering, Materials Engineering, Materials Science +17

Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

M. Quillec, Leon J. Goldstein, G. Le Roux et al. · Journal of Applied Physics · 1984 · 112 citations

Natural Sciences, Materials Science, Physics +17