A study of residual background doping in high purity indium phosphide grown by atmospheric pressure OMVPE

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

W. Walukiewicz, J. Łagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1980 · 333 citations

Natural Sciences, Materials Science, Physics +17

Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method

S. J. Bass · Journal of Crystal Growth · 1979 · 122 citations

Engineering, Materials Engineering, Materials Science +13

Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique

S. J. Bass · Journal of Crystal Growth · 1975 · 112 citations

Engineering, Materials Engineering, Materials Science +12

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

T. F. Kuech, R. M. Potemski · Applied Physics Letters · 1985 · 76 citations

Engineering, Materials Engineering, Materials Science +17

Applications of Electrochemical Methods for Semiconductor Characterization: I . Highly Reproducible Carrier Concentration Profiling of VPE “Hi‐Lo”

T. Ambridge, John L. Stevenson, R.M. Redstall · Journal of The Electrochemical Society · 1980 · 73 citations

Natural Sciences, Chemistry, Materials Science +17