R. M. Potemski

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Publications

Citations

1.6K

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Active since

1972

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

University of Wisconsin–Madison

University of California San Diego

R. M. Potemski is an author at IBM Research - Thomas J. Watson Research Center specializing in materials science, materials engineering, and semiconductor materials.

Publications per year

1972–1994

Publications

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Engineering, Materials Engineering, Materials Science +14

The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

T. F. Kuech, E. Veuhoff, T. S. Kuan et al. · Journal of Crystal Growth · 1986 · 157 citations

Engineering, Materials Engineering, Materials Science +16

Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

T. F. Kuech, D. J. Wolford, E. Veuhoff et al. · Journal of Applied Physics · 1987 · 153 citations

Natural Sciences, Materials Engineering, Materials Science +16

Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x

T. F. Kuech, D. J. Wolford, R. M. Potemski et al. · Applied Physics Letters · 1987 · 139 citations

Natural Sciences, Materials Engineering, Materials Science +15

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

T. F. Kuech, R. M. Potemski · Applied Physics Letters · 1985 · 76 citations

Engineering, Materials Engineering, Materials Science +17

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