R. M. Potemski

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Semiconductors, Materials Science, Electrical Engineering +10

The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures

T. F. Kuech, E. Veuhoff, T. S. Kuan et al. · Journal of Crystal Growth · 1986 · 157 citations

Materials Science, Ii-vi Semiconductor, Engineering +7

Properties of high-purity Al<i>x</i>Ga1−<i>x</i>As grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

T. F. Kuech, D. J. Wolford, E. Veuhoff et al. · Journal of Applied Physics · 1987 · 153 citations

Materials Science, Materials Engineering, Epitaxial Growth +13

Dependence of the Al<i>x</i>Ga1−<i>x</i>As band edge on alloy composition based on the absolute measurement of <i>x</i>

T. F. Kuech, D. J. Wolford, R. M. Potemski et al. · Applied Physics Letters · 1987 · 139 citations

Aluminium Nitride, Engineering, Alloy Composition +17

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

T. F. Kuech, R. M. Potemski · Applied Physics Letters · 1985 · 76 citations

Materials Engineering, Materials Science, Electrical Engineering +14