IEEE Transactions on Microwave Theory and Techniques · 1996 · 15 citations · 4 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsTransistor BiasingElectron MobilityEquivalent Circuit ModelingHigh-electron-mobility Transistor ModelingHigh-electron-mobility TransistorsLarge-signal Device ModelingLarge-signal ModelingSmall-signal Equivalent Circuit ModelsSmall-signal Equivalent Circuits
We propose an empirical large-signal model of high electron mobility transistors (HEMTs). The bias-dependent data of small-signal equivalent circuit elements are obtained from S-parameters measured at various bias settings. And C/sub gs/, C/sub gd/, g/sub m/, and g/sub ds/, are described as functions of V/sub gs/ and V/sub ds/. We included our large-signal model in a commercially available circuit simulator as a user-defined model and designed a 30/60-GHz frequency doubler. The fabricated doubler's characteristics agreed well with the design calculations.
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GaAs FET device and circuit simulation in SPICE
H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 518 citations