A study of electron traps in vapour-phase epitaxial GaAs

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Engineering, Electrical Engineering, Materials Science +16

Fast capacitance transient appartus: Application to ZnO and O centers in GaP <i>p-n</i> junctions

D. V. Lang · Journal of Applied Physics · 1974 · 604 citations

Engineering, Materials Engineering, Materials Science +17

Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

C. T. Sah, L. Forbes, Laurence Rosier et al. · Solid-State Electronics · 1970 · 452 citations

Engineering, Materials Science, Physics +17

Semiconductor Statistics

C A Hogarth · Physics Bulletin · 1963 · 434 citations

Engineering, Electrical Engineering, Materials Science +16

Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique

J.A. Pals · Solid-State Electronics · 1974 · 151 citations

Natural Sciences, Materials Science, Physics +14