Applied Physics Letters · 2000 · 58 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceEpitaxial GrowthMetal SulfidesQuantum WellsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor NanomaterialsCrystallinityExcitonsMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopyQuantum Well StructuresSecondary Ion Mass SpectrometryZinc Sulfides
Zinc blende MgS has been grown on GaAs by molecular beam epitaxy using a novel method where the sources were Mg and ZnS. A reaction at the surface results in the formation of MgS layers with a Zn content estimated by secondary ion mass spectrometry and Auger spectroscopy to be between 0.5% and 2%. Double crystal x-ray rocking curve measurements of ZnSe/MgS/ZnSe layers show layers with good crystallinity. Using this growth technique layers up to 67 nm thick have been grown. Photoluminescence measurements of MgS/ZnSe/MgS single-quantum-well structures show that the confinement of the heavy hole excitons can be as large as 430 meV for a 1.7 nm well.
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