L. Salamanca-Riba

Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnS<i>x</i>Se1−<i>x</i>/ZnSe buffer layer/GaAs heterostructures

L. H. Kuo, L. Salamanca-Riba, Biao Wu et al. · Applied Physics Letters · 1995 · 66 citations

Engineering, Crystal Growth Technology, Substrate Surface Chemistry +16

Determination of the optical constants of ZnSe films by spectroscopic ellipsometry

Rachid Dahmani, L. Salamanca-Riba, Nhan V. Nguyen et al. · Journal of Applied Physics · 1994 · 55 citations

Optical Materials, Engineering, Optoelectronic Devices +27

Molecular beam epitaxy of low defect density (<b>⩽</b>1×104 cm−2) ZnSSe on GaAs

Biao Wu, G. M. Haugen, J. M. DePuydt et al. · Applied Physics Letters · 1996 · 50 citations

Semiconductors, Znse Buffer Growth, Electrical Engineering +14

Misfit dislocation nucleation in doped and undoped ZnSe/GaAs

L. H. Kuo, L. Salamanca-Riba, J. M. DePuydt et al. · Applied Physics Letters · 1993 · 35 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +14

Chemical ordering in Zn1−<i>x</i>Fe<i>x</i>Se alloys

K. Park, L. Salamanca-Riba, B. T. Jonker · Applied Physics Letters · 1992 · 29 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +14