C. Morhain - Concepedia

Author

C. Morhain

Centre National de la Recherche Scientifique ORCID

Also Known As

Avramenko, K. A., C Morhain, C. Morhain, Christian Morhain, Morhain, C., Morhain, Christian

103

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Université Côte d'Azur Heriot-Watt University Université de Montpellier

About

C. Morhain is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	38	1.2K
2	Applied Physics	22	36	1.1K
3	Natural Sciences	5	5	117
4	Chemistry	3	3	99
5	Chemical Engineering	1	1	11

C. Morhain

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates J.‐M. Chauveau, M. Teisseire, H. Kim‐Chauveau, Applied Physics Letters Materials SciencePhotoluminescenceEngineeringPhysicsTopological Heterostructures	2010	71
Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells T. Bretagnon, Pierre Lefèbvre, T. Guillet, Applied Physics Letters Categoryquantum ElectronicsEngineeringLuminescence PropertyTunneling MicroscopyInternal Electric Field	2007	70
Non-polar<i>a</i>-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy J.‐M. Chauveau, M. Laügt, P. Vennéguès, Semiconductor Science and Technology SemiconductorsMaterials ScienceStark EffectIi-vi SemiconductorEngineering	2008	64
Interface structure and anisotropic strain relaxation of nonpolar wurtzite (112¯) and (101¯) orientations: ZnO epilayers grown on sapphire J.‐M. Chauveau, P. Vennéguès, M. Laügt, Journal of Applied Physics EngineeringActivated Slip SystemsNonpolar OrientationsQuantum MaterialsMolecular Beam Epitaxy	2008	62
Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source C. Bradford, C. B. O’Donnell, Bernhard Urbaszek, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringIi-vi SemiconductorMolecular-beam Epitaxy	2000	58
Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy P. Vennéguès, J.‐M. Chauveau, M. Korytov, Journal of Applied Physics Materials ScienceMaterial AnalysisPartial DislocationsEngineeringCrystalline Defects	2008	53
Residual and nitrogen doping of homoepitaxial nonpolar m-plane ZnO films grown by molecular beam epitaxy Dimitri Tainoff, M. Al-Khalfioui, C. Deparis, Applied Physics Letters Materials EngineeringOxide HeterostructuresMaterials ScienceSemiconductorsEngineering	2011	51
Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection R. Triboulet, J.-O. Ndap, A. Tromson‐Carli, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal MaterialLarge Znse Crystals	1996	47
Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers C. Morhain, M. Teisseire, S. V�zian, physica status solidi (b) Localized Excited StateEngineeringOptoelectronic DevicesChemistryArsenic Impurity	2002	44
Photoluminescence study of ZnSe single crystals grown by solid-phase recrystallization E. Tournié, C. Morhain, G. Neu, Applied Physics Letters Optical MaterialsEngineeringCrystal Growth TechnologyChemistryLuminescence Property	1996	43

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