Publication | Open Access
Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells
70
Citations
15
References
2007
Year
Categoryquantum ElectronicsEngineeringLuminescence PropertyTunneling MicroscopyInternal Electric FieldQuantum MaterialsElectric FieldCompound SemiconductorZno∕zn1−xmgxo Quantum WellsPhotonicsElectrical EngineeringPhotoluminescencePhysicsQuantum DeviceBarrier Composition DependenceElectric Field VariesApplied PhysicsCondensed Matter PhysicsQuantum Photonic DeviceExcitonic EnergiesOptoelectronics
Time-integrated photoluminescence experiments are used to study the excitonic optical recombinations in wurtzite ZnO∕Zn1−xMgxO single quantum wells of varying widths and magnesium compositions. By comparing experimental results with a variational calculation of excitonic energies, the authors determine the magnitude of the built-in electric field that is induced by both spontaneous and piezoelectric polarizations. It is found that the electric field varies linearly with magnesium composition. By taking into consideration the well-known distribution of electric field among the barrier and the well layers in multiquantum wells, the authors show that their results are fully consistent with previously reported data.
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