Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.3K citations

Semiconductors, Electrical Engineering, Engineering +14

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/<i>ƒ</i>) noise

M. J. Kirton, Michael J. Uren · Advances In Physics · 1989 · 1.2K citations

Engineering, Integrated Circuits, Defect Tolerance +19

A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Transactions on Electron Devices · 1990 · 874 citations

Device Modeling, Electrical Engineering, New Formulation +15

Random telegraph noise of deep-submicrometer MOSFETs

Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 308 citations

Room Temperature, Electrical Engineering, Engineering +9

Explaining the amplitude of RTS noise in submicrometer MOSFETs

Eddy Simoen, B. Dierickx, Cor Claeys et al. · IEEE Transactions on Electron Devices · 1992 · 144 citations

Electrical Engineering, Engineering, Physics +12