Japanese Journal of Applied Physics · 1996 · 22 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesEtching ProcessesField-effect TransistorsNanoelectronicsSemiconductor Device MaterialsThin Film EtchingThin-film DepositionFocused Ion Beam LithographyFocused Ion Beam MachiningFocused Ion Beam PatterningIon Beam EtchingNanofabrication Of Nanoelectronic DevicesThreshold Voltage ExtractionVoltage
Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current of 10 µA was obtained from a 100-tip field emitter array (FEA) at an extraction voltage of 100 V. A prototype of a nanometer-sized field emitter was fabricated using focused ion beam (FIB) etching and electron-beam-induced deposition (EBID).
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