Enhanced electron emission from <i>n</i>-type porous Si field emitter arrays

Abstract

Tip surfaces of n-type Si field emitter arrays (FEAs) have been anodized to obtain n-type porous layers on the top surfaces of the Si emitters. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler–Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tip could be decreased and the field conversion factor could be increased by the process.