Applied Physics Letters · 2009 · 30 citations · 15 references
Optical MaterialsEngineeringLaser ApplicationsColloidal NanocrystalsOptoelectronic DevicesChemistrySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorPhotodetectorsQuantum DotsMolecular Beam EpitaxyCompound SemiconductorMaterials ScienceAntimony Surfactant-mediated GrowthPhotoluminescenceNanotechnologyOptoelectronic MaterialsSegregated AntimonySurface ScienceApplied PhysicsGaas QdsThreshold Current DensitiesExcess Segregated AntimonyOptoelectronicsInterface Properties
We present a method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated metal organic chemical vapor deposition. This process consists of removing the excess segregated antimony from the surface of InAs/Sb:GaAs QDs by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of InAs/Sb:GaAs QDs (high density, low coalescence) without the formation of antimony-induced nonradiative defects. Finally, we show that this better QD interface quality results in a strong decrease of the threshold current densities of InAs/Sb:GaAs QD lasers in the 1.3 μm band.
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