Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics

Abstract

We present a method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated metal organic chemical vapor deposition. This process consists of removing the excess segregated antimony from the surface of InAs/Sb:GaAs QDs by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of InAs/Sb:GaAs QDs (high density, low coalescence) without the formation of antimony-induced nonradiative defects. Finally, we show that this better QD interface quality results in a strong decrease of the threshold current densities of InAs/Sb:GaAs QD lasers in the 1.3 μm band.

References

Page 1

	Year	Citations
Multidimensional quantum well laser and temperature dependence of its threshold current Yasuhiko Arakawa, H. Sakaki Applied Physics Letters Categoryquantum ElectronicsEngineeringLaser ScienceNew TypeTemperature Dependence	1982	3.3K
High-Q photonic nanocavity in a two-dimensional photonic crystal Yoshihiro Akahane, Takashi Asano, Bong-Shik Song, Nature PhotonicsEngineeringCavity QedApplied PhysicsHigh-q Photonic Nanocavity	2003	2.7K
Coupling of quantum-dot light emission with a three-dimensional photonic-crystal nanocavity K. Aoki, Denis Guimard, Masao Nishioka, Nature Photonics Quantum SciencePhotonicsQuantum OpticEngineeringQuantum-dot Light Emission	2008	183
Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb J. M. Ripalda, Daniel Granados, Y. González, Applied Physics Letters Ii-vi SemiconductorPhotoluminescenceEngineeringPhysicsQuantum Device	2005	111
Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer J. M. Ulloa, I. Drouzas, P. M. Koenraad, Applied Physics Letters EngineeringSemiconductor NanostructuresIi-vi SemiconductorQuantum ComputingTunneling Microscopy	2007	91
Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure Qianghua Xie, J. E. Van Nostrand, Jerram L. Brown, Journal of Applied Physics Gasb SurfaceEngineeringChemistryMetalloid ContaminationMolecular Beam Epitaxy	1999	66
Sb-surfactant-mediated growth of Si and Ge nanostructures A. Portavoce, Isabelle Berbézier, A. Ronda Physical Review B Materials ScienceSb SmgEngineeringPhysicsNanomaterials	2004	65
Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition Denis Guimard, Yasuhiko Arakawa, M. Ishida, Applied Physics Letters Ground State LasingOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices	2007	39
1.55 μ m emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation Denis Guimard, Shiro Tsukamoto, Masao Nishioka, Applied Physics Letters EngineeringOptoelectronic DevicesChemistrySemiconductor NanostructuresSemiconductors	2006	34
Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony Pantelis Aivaliotis, L. R. Wilson, E. A. Zibik, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2007	32

Page 1