J. E. Van Nostrand

Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Ya. I. Alivov, J. E. Van Nostrand, D. C. Look et al. · Applied Physics Letters · 2003 · 441 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +18

Surface Morphology during Multilayer Epitaxial Growth of Ge(001)

J. E. Van Nostrand, S. Jay Chey, M-A Hasan et al. · Physical Review Letters · 1995 · 198 citations

Materials Science, Materials Engineering, Surface Characterization +13

Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO

D. C. Reynolds, D. C. Look, B. Jogai et al. · Solid State Communications · 1998 · 149 citations

Photoluminescence, Engineering, Green Luminescence Band +7

Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

Jun Yang, A. Lunev, G. Simin et al. · Applied Physics Letters · 2000 · 121 citations

Engineering, Silicon Substrates, Optoelectronic Devices +17

Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Qianghua Xie, J. E. Van Nostrand, Jerram L. Brown et al. · Journal of Applied Physics · 1999 · 66 citations

Gasb Surface, Engineering, Chemistry +21