I. Drouzas

Nuclear Spin Switch in Semiconductor Quantum Dots

A. I. Tartakovskii, T. Wright, A. Russell et al. · Physical Review Letters · 2007 · 137 citations · Full text

Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

J. M. Ulloa, I. Drouzas, P. M. Koenraad et al. · Applied Physics Letters · 2007 · 91 citations · Full text

Engineering, Semiconductor Nanostructures, Ii-vi Semiconductor +16

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

J. M. Ulloa, Cem Çelebi, P. M. Koenraad et al. · Journal of Applied Physics · 2007 · 53 citations · Full text

Engineering, Colloidal Nanocrystals, Semiconductor Nanostructures +18

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

V. Haxha, I. Drouzas, J. M. Ulloa et al. · Physical Review B · 2009 · 52 citations · Full text

Materials Science, Semiconductors, Engineering +15

Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots

M. N. Makhonin, A. I. Tartakovskii, Alexander Vankov et al. · Physical Review B · 2008 · 28 citations · Full text

Engineering, Nuclear Physics, Spin Systems +18