Applied Physics Letters · 2007 · 93 citations · 20 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsNanoelectronicsNanostructured Electronic MaterialsQuantum DotsSemiconductor InterfacesSemiconductor NanomaterialsSemiconductor PhysicsCappingCapping SystemsCapping TechniquesLattice MismatchLattice Mismatch EffectsQuantum Dot MaterialsSelf-assembled Quantum DotsSemiconductor Quantum Dots
The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs∕GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with GaAs0.75Sb0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.
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Dominique Bruls, J. W. A. M. Vugs, P. M. Koenraad et al. · Applied Physics Letters · 2002 · 221 citations · Full text