Phosphorus implantation into 4H-silicon carbide

Models for contacts to planar devices

H.H. Berger · Solid-State Electronics · 1972 · 917 citations

Engineering, Electrical Engineering, Electronic Materials +5

Physical Properties of SiC

W. J. Choyke, Gerhard Pensl · MRS Bulletin · 1997 · 261 citations

Natural Sciences, Materials Science, Physics +12

Structural freedom, topological disorder, and the irradiation-induced amorphization of ceramic structures

L. W. Hobbs, A. N. Sreeram, C. Esther Jesurum et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 151 citations

Natural Sciences, Materials Science, Physics +17

2.6 kV 4H-SiC lateral DMOSFETs

J. Spitz, M. R. Melloch, James A. Cooper et al. · IEEE Electron Device Letters · 1998 · 133 citations

Engineering, Electrical Engineering, Materials Science +15

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

M. A. Capano, Sang‐Wan Ryu, M. R. Melloch et al. · Journal of Electronic Materials · 1998 · 108 citations

Engineering, Materials Engineering, Materials Science +16