J. Spitz

2.6 kV 4H-SiC lateral DMOSFETs

J. Spitz, M. R. Melloch, James A. Cooper et al. · IEEE Electron Device Letters · 1998 · 132 citations

Sic Mosfet, Electrical Engineering, Engineering +11

Recent Advances in SiC Power Devices

James A. Cooper, M. R. Melloch, J. M. Woodall et al. · Materials science forum · 1998 · 52 citations

Electrical Engineering, Engineering, Power Device +6

High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

J. Spitz, M. R. Melloch, James A. Cooper et al. · Materials science forum · 1998 · 12 citations

Electrical Engineering, Engineering, High Voltage Engineering +11

Precision crystal corner cube arrays for optical gratings formed by (100) silicon planes with selective epitaxial growth

G.W. Neudeck, J. Spitz, Julie Chien-Hua Chang et al. · Applied Optics · 1996 · 11 citations

Optical Materials, Selective Epitaxial Growth, Engineering +21

2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC

J. Spitz, M. R. Melloch, James A. Cooper et al. · 2000 · 11 citations

Semiconductor Technology, Electrical Engineering, Power Mosfet +10