Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 23 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Band StructureElectronic Material CharacterizationSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsAlloy SemiconductorsBand GapBand Gap EnergyCarrier ConcentrationElectronic Band GapHall EffectHall Effect MeasurementsSemiconductor Characterization
Due to the huge bandgap-bowing, a red shift of the band gap energy with increasing nitrogen content is expected for the InAsN alloy. However, a blue shift of the fundamental absorption edge has been observed in a recent study. This result seems to be significantly affected by the Burstein-Moss effect because the InAsN alloy has a large carrier concentration. The Burstein-Moss effect should be ruled out in order to characterize the real band gap energy. In this paper, Hall effect measurements were performed to estimate the carrier concentration of the InAsN alloy films and the Burstein-Moss shift energy was evaluated. Excluding the Burstein-Moss shift energy, a red shift of the real band-gap energy with increasing nitrogen content was observed. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Band Gap Reduction in InAsN Alloys
Ding-Kang Shih, Hao-Hsiung Lin, Li-Wei Sung et al. · Japanese Journal of Applied Physics · 2003 · 69 citations