Reactive ION Beam Etching of GaN Grown By Movpe

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Surface emitting semiconductor lasers

Kenichi Iga, Fumio Koyama, Shinya Kinoshita · IEEE Journal of Quantum Electronics · 1988 · 649 citations

Engineering, Electrical Engineering, Materials Science +17

Low-threshold electrically pumped vertical-cavity surface-emitting microlasers

J. L. Jewell, Ya‐Ze Lee, Sarah J. Walker et al. · Electronics Letters · 1989 · 333 citations

Engineering, Electrical Engineering, Optoelectronics +15

Room-temperature photoenhanced wet etching of GaN

M. S. Minsky, Mark White, Evelyn L. Hu · Applied Physics Letters · 1996 · 290 citations

Natural Sciences, Materials Engineering, Materials Science +17