Cathodoluminescence from gallium nitride implanted with arsenic or phosphorus

Optical Processes in Semiconductors

J. I. Pánkové, D. A. Kiewit · Journal of The Electrochemical Society · 1972 · 4.6K citations

Engineering, Materials Engineering, Materials Science +14

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of ion-implanted GaN

J. I. Pánkové, J.A. Hutchby · Journal of Applied Physics · 1976 · 342 citations

Engineering, Materials Engineering, Materials Science +16

Donor-acceptor pair recombination in GaN

R. Dingle, M. Ilegems · Solid State Communications · 1971 · 262 citations

Engineering, Materials Engineering, Materials Science +9