Russian Microelectronics · 2009 · 17 citations · 16 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor ReliabilityBias Stress InstabilityCmos ReliabilityCmos ScalingOxide ReliabilityScaling Effects In CmosSiliconStress-induced Leakage Current
In the review, the changes in electronic processes in the channel of the MOS transistor taking place under applying mechanical stresses are described. It is shown that the use of the stressed films of silicon nitride, the source and sink from the germanium-silicon alloy, etc., leads to an increase in the mobility of holes and electrons and to an increase in the efficiency of transistor operation. The application of this method to CMOS structures is also described.
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Piezoresistance Effect in Germanium and Silicon
Charles S. Smith · Physical Review · 1954 · 2K citations
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures
R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations