MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Bandgap bowing in BGaN thin films

A. Ougazzaden, S. Gautier, T. Moudakir et al. · Applied Physics Letters · 2008 · 57 citations

Natural Sciences, Materials Engineering, Materials Science +17

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

M. Abid, T. Moudakir, G. Orsal et al. · Applied Physics Letters · 2012 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +6

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Jeomoh Kim, Zachary Lochner, Mi‐Hee Ji et al. · Journal of Crystal Growth · 2013 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +13

GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3

S. Gautier, Corinne Sartel, S. Ould‐Saad et al. · Journal of Crystal Growth · 2006 · 43 citations

Engineering, Materials Engineering, Materials Science +9

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, Marek Skowroński et al. · Journal of Electronic Materials · 1997 · 39 citations

Natural Sciences, Materials Engineering, Materials Science +14